This project focuses on the development and performance analysis of an energy-efficient 7T Static RAM cell for VLSI applications. In modern digital systems, memory plays a crucial role, and Static RAM is commonly used due to its high speed and reliability. However, with continuous technology scaling, challenges such as increased power consumption, leakage current, and reduced stability have become major concerns. The conventional 6T Static RAM cell suffers from higher leakage power and instability during read and write operations, which negatively affects overall system performance. To overcome these limitations, a 7T Static RAM cell is introduced by adding an extra transistor to the existing 6T structure. This additional transistor enhances read stability by minimizing disturbances at internal nodes and also helps in reducing leakage current. The proposed design mainly focuses on improving the static noise margin (SNM) and reducing power dissipation, especially during the hold state. Using parameters such as power consumption, delay, and stability, the proposed 7T Static RAM cell is evaluated. The proposed design exhibits reduced power consumption and enhanced stability compared to the standard Static RAM cell. Low-power and high-performance memory applications indicate the suitability of the proposed design.

The developed 7T Static RAM cell has been effectively implemented and evaluated, and the findings indicate that it delivers enhanced performance with respect to power consumption, stability, and energy efficiency. The simulation outcomes indicate that the standard 7T Static RAM structure exhibits strong stability with improved SNM values and dependable functionality. The addition of an extra transistor improves read stability and minimizes internal node disturbances, thereby increasing the robustness of the circuit. Moreover, the adoption of the DR-VDR technique considerably lowers power dissipation and leakage current, which are crucial parameters in low-power VLSI systems. Although there is a slight decrease in SNM along with a marginal increase in delay, the overall efficiency of the design remains acceptable for real-world usage .The lowered power-delay product and energy usage demonstrate that the proposed architecture maintains an efficient trade-off between power consumption and performance. Hence, the 7T Static RAM cell integrated with the DR-VDR technique can be regarded as an efficient and dependable memory solution for modern energy-efficient applications, including handheld gadgets, embedded platforms, and power-limited digital systems.

[1]Singh, Avinash, et al. “Design and Simulation of Low Power Leakage-Controlled SRAM Cell.” 2025 10th International Conference on Signal Processing and Communication (ICSC). IEEE, 2025. DOI: 10.1109/ICSC64553.2025.10968384 [2]Upadhyay, Shrikant, et al. “Design of Low Power SRAM Cell with Increased Read and Write Performance for Various Applications.” 2025 International Conference on Communication and Smart Devices (ICCoSD). Vol. 1. IEEE, 2025. DOI:10.1109/ICCoSD66074.2025.11348159 [3]Bisht, Akshita, and Poornima Mittal. “A 32 nm single-ended 7T SRAM cell with improved static noise margin and leakage power.” Physica Scripta 101.2 (2026): 025004. DOI 10.1088/1402-4896/ae325a. [4]Chowdary, Guduru Jimitesh, and Rikmantra Basu. “Design and Analysis of Low Power Security-Oriented SRAMs.” 2024 IEEE 13th International Conference on Communication Systems and Network Technologies (CSNT). IEEE, 2024. DOI: 10.1109/CSNT60213.2024.10546055 [5]Srinu, M., E. Sreenivasa Rao, and P. Chandra Sekhar. “Design of low power SRAM cells with increased read and write performance using Read-Write assist technique.” e-Prime-Advances in Electrical Engineering, Electronics and Energy 7 (2024): 100381.DOI: 10.1016/j.prime.2023.100381 [6]Madhumitha, A., and Kirti S. Pande. “Dual Phased-Write 7T SRAM Cell.” 2024 IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics (DISCOVER). IEEE, 2024. DOI: 10.1109/DISCOVER62353.2024.10750671 [7]Sharma, Sarda, and M. Vinodhini. “Implementation of High SNM SRAM Cell and Testing in 45 nm CMOS Logic Process.” 2024 IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics (DISCOVER). IEEE, 2024. DOI: 10.1109/DISCOVER62353.2024.10750749 [8]Choi, Woo Chang, and Sung-Hun Jo. “Radiation hardened read-stability and speed enhanced sram for space applications.” Applied Sciences 14.19 (2024): 9015. DOI: 10.3390/app14199015 [9]Yadav, Pradeep Singh, and Harsha Jain. “Review of 6T SRAM for Embedded Memory Applications.” Indian Journal of VLSI Design (IJVLSID) 3.1 (2023): 24-30. DOI:10.54105/ijvlsid.A1217.033123 [10]Oh, Tae Woo, et al. “Local bit-line SRAM architecture with data-aware power-gating write assist.” IEEE Transactions on Circuits and Systems II: Express Briefs 70.1 (2022): 306-310.DOI: 10.1109/TCSII.2022.3206478

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