In present work, the tunnelling junction was fabricated using an electrochemical etching method. The I-V characteristics were recorded before and after the tunnelling junction between tungsten tips was formed. We have observed that before etching current-voltage followed Ohm’s law shows linear relation between them. After nano junction was formed non-linear relation between current and voltage was observed. Estimated values of resistance from the I-V curve were found to be increases for tunnelling junctions indicating flow of the current in the circuit is due to tunnelling effect. Linear fitting of the F-N plot shows the current was due to field emission of electrons.

Tunnelling junction was fabricated using an electrochemical etching method. The I-V characteristics were studied before and after the tunnelling junction between tungsten tips was formed. I-V characteristics show expected linear relation between current and applied voltage satisfied Ohm’s law before junction was formed. Non-linear relation between current and voltage was observed after nano junction was formed between tungsten tips. It is observed that estimated values of resistance from I-V curve in positive and negative regions were increased for tunnelling junctions, indicating flow of the current in the circuit is due to tunnelling effect. F-N plot shows that current was due to field emission of electrons.

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